X-ray diffractometry of Si epilayers grown on porous silicon

Abstract

X-ray double-crystal diffractometry was used to measure lattice deformation of porous silicon (PS) and Si epitaxial layers grown on PS. PS layers 1-10 m in thickness and 15-65% in porosity were formed by anodization of n+-type Sb doped Si wafers in the 12% HF aqueous solution. Lattice deformation of both PS and epitaxial layers are shown to strongly depend on PS porosity. Grown on uniform PS 40-60% in porosity, the epilayers, single-crystal as they are, display high lattice deformation and defect density. Epilayers grown on two-layer PS are comparable with the films grown on the n+-type single-crystal Si substrate.