Electronic and dynamical properties of bulk and layered MoS2

Full metadata record

DC Field	Value	Language
dc.contributor.author	Krivosheeva, A. V.	-
dc.contributor.author	Shaposhnikov, V. L.	-
dc.contributor.author	Borisenko, V. E.	-
dc.contributor.author	Lazzari, J. L.	-
dc.date.accessioned	2014-11-13T10:14:16Z	-
dc.date.accessioned	2017-07-13T06:19:41Z	-
dc.date.available	2014-11-13T10:14:16Z	-
dc.date.available	2017-07-13T06:19:41Z	-
dc.date.issued	2014	-
dc.identifier.citation	Electronic and dynamical properties of bulk and layered MoS2 / A. V. Krivosheeva [ and others] // Доклады БГУИР. - 2014. - № 5 (83). - С. 34 - 37.	ru_RU
dc.identifier.uri	https://libeldoc.bsuir.by/handle/123456789/1420	-
dc.description.abstract	Electronic and dynamical properties of MoS2 are determined by means of theoretical calculations. Various numbers of layers with different thickness of the vacuum layer were considered. We have found that the band gap of bulk MoS2 is increasing upon decreasing of the number of layers from 0.76 eV up to 1.85 eV, and transforms from indirect to direct one in one-monolayer structure. The influence of vacancies on the electronic properties of MoS2 is analyzed and its dynamical properties are presented.	ru_RU
dc.language.iso	en	ru_RU
dc.publisher	БГУИР	ru_RU
dc.subject	доклады БГУИР	ru_RU
dc.subject	molybdenum disulfide	ru_RU
dc.subject	nanostructure	ru_RU
dc.subject	electronic properties	ru_RU
dc.subject	phonons	ru_RU
dc.title	Electronic and dynamical properties of bulk and layered MoS2	ru_RU
dc.type	Article	ru_RU
Appears in Collections:	№5 (83)