| DC Field | Value | Language |
|---|
| dc.contributor.author | Velichko, O. I. | - |
| dc.date.accessioned | 2017-11-27T13:02:04Z | - |
| dc.date.available | 2017-11-27T13:02:04Z | - |
| dc.date.issued | 2017 | - |
| dc.identifier.citation | Velichko, O. I. Effect of charged clusters on the diffusion of impurity atoms in silicon crystals / O. I. Velichko // Journal of Engineering Physics and Thermophysics. ― 2017. ― Vol. 90, No. 3― Рp. 725-728. - DOI 10.1007/s10891-017-1621-y. | ru_RU |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/28088 | - |
| dc.description.abstract | An equation of diffusion of impurity atoms in silicon crystals has been obtained, based on which the influence of charged clusters in a silicon crystal on the process of impurity transfer can be determined. It is shown that a characteristic feature of this effect is the appearance of an additional flux of impurity atoms, which is capable of leading to impurity segregation. | ru_RU |
| dc.language.iso | en | ru_RU |
| dc.publisher | Голландия | ru_RU |
| dc.subject | публикации ученых | ru_RU |
| dc.subject | diffusion | ru_RU |
| dc.subject | segregation | ru_RU |
| dc.subject | cluster | ru_RU |
| dc.subject | impurity | ru_RU |
| dc.subject | silicon | ru_RU |
| dc.title | Effect of charged clusters on the diffusion of impurity atoms in silicon crystals | ru_RU |
| dc.type | Статья | ru_RU |
| Appears in Collections: | Публикации в зарубежных изданиях
|
