| DC Field | Value | Language |
|---|
| dc.contributor.author | Kovalevskii, A. A. | - |
| dc.contributor.author | Strogova, A. S. | - |
| dc.contributor.author | Komar, O. M. | - |
| dc.date.accessioned | 2018-01-18T08:20:10Z | - |
| dc.date.available | 2018-01-18T08:20:10Z | - |
| dc.date.issued | 2017 | - |
| dc.identifier.citation | Kovalevskii, A. A. Formation of Nanostructured Films of Polycrystalline Silicon Doped with Germanium / A. A. Kovalevskii, A. S. Strogova, O. M. Komar // Polycrystalline Films: Characteristics, Applications and Research, editor Alfred L. Davis. Book. – 2017. – Chapter 3. – Р. 59 – 74. | ru_RU |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/29371 | - |
| dc.description.abstract | The impact of germanium as isovalent impurity on the process of formation of nanostructured films of polycrystalline silicon doped with germanium is investigated. | ru_RU |
| dc.language.iso | en | ru_RU |
| dc.publisher | Nova Science Publishers | ru_RU |
| dc.subject | публикации ученых | ru_RU |
| dc.subject | polycrystalline silicon | ru_RU |
| dc.subject | germanium | ru_RU |
| dc.subject | nanoclusters | ru_RU |
| dc.title | Formation of Nanostructured Films of Polycrystalline Silicon Doped with Germanium | ru_RU |
| dc.type | Статья | ru_RU |
| Appears in Collections: | Публикации в зарубежных изданиях
|
