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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/32887
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dc.contributor.authorZakhlebayeva, A. I.-
dc.contributor.authorBogomazova, N. V.-
dc.contributor.authorPligovka, A. N.-
dc.contributor.authorMurashkevich, A.-
dc.contributor.authorGalkovsky, T.-
dc.contributor.authorGorokh, G. G.-
dc.date.accessioned2018-09-12T08:59:27Z-
dc.date.available2018-09-12T08:59:27Z-
dc.date.issued2018-
dc.identifier.citationPhotosensitive heterostructures based on island-grid films and nanoporous matrices and sulphide nanostructures / A. Zakhlebayeva and other // Saint Petersburg OPEN 2018: 5th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures. - Saint Petersburg: Academic University Publishing St. Petersburg, 2018. - Р. 533 - 534.ru_RU
dc.identifier.urihttps://libeldoc.bsuir.by/handle/123456789/32887-
dc.description.abstractThe photosensitive heterostructures of ZnS/SnSx systems deposited onto island-grid films and nanoporous matrices by ion layering were investigated by scanning electron microscopy and photovoltaic measurements. The obtained nanostructured heterostructures were characterized by low electrical resistance of 140-80 Ohm with the semiconductor character of the temperature dependence have shown photoelectric EMF of about 230 mV.ru_RU
dc.language.isoenru_RU
dc.publisherAcademic University Publishing St. Petersburgru_RU
dc.subjectпубликации ученыхru_RU
dc.subjectsemiconductor heterostructuresru_RU
dc.subjection-layering depositionru_RU
dc.subjectsulphide thin filmsru_RU
dc.titlePhotosensitive heterostructures based on island-grid films and nanoporous matrices and sulphide nanostructuresru_RU
dc.typeСтатьяru_RU
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