| DC Field | Value | Language |
|---|
| dc.contributor.author | Danilyuk, M. | - |
| dc.contributor.author | Messanvi, A. | - |
| dc.date.accessioned | 2018-09-26T08:21:31Z | - |
| dc.date.available | 2018-09-26T08:21:31Z | - |
| dc.date.issued | 2013 | - |
| dc.identifier.citation | Danilyuk, M. The dependence of gallium nitride nanowires properties on synthesis pressure and temperature / M. Danilyuk, A. Messanvi // Nano-Design, Technology, Computer Simulation — NDTCS ’ 2013: proceedings of the 15th International Workshop on New Approaches to High-Tech, Minsk, June 11–15, 2013 / BSUIR. - Minsk, 2013. - P. 21 – 22. | ru_RU |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/33034 | - |
| dc.description.abstract | The main task of the investigation was to perform the synthesis of gallium nitride nanowires using
a low pressure chemical vapor deposition system. The nanowires were grown via a catalyst-assisted reaction
based on the vapor-liquid-solid mechanism. The influences of catalyst, temperature and pressure on the
growth of gallium nitride nanowires were explored. Optimal results were obtained at a temperature of 750oC
and a pressure of 400 to 500 mTorr. | ru_RU |
| dc.language.iso | en | ru_RU |
| dc.publisher | БГУИР | ru_RU |
| dc.subject | материалы конференций | ru_RU |
| dc.subject | Gallium Nitride | ru_RU |
| dc.subject | photoluminescence | ru_RU |
| dc.title | The dependence of gallium nitride nanowires properties on synthesis pressure and temperature | ru_RU |
| dc.type | Статья | ru_RU |
| Appears in Collections: | NDTCS 2013
|
