| DC Field | Value | Language |
|---|
| dc.contributor.author | Britch, M. | - |
| dc.contributor.author | Dobrego, K. V. | - |
| dc.contributor.author | Krasovskaya, L. | - |
| dc.date.accessioned | 2018-10-01T06:52:59Z | - |
| dc.date.available | 2018-10-01T06:52:59Z | - |
| dc.date.issued | 2013 | - |
| dc.identifier.citation | Britch, M. Fullerene-based systems as components of nanoelectronic devices / M. Britch, Dobrego K. V., L. Krasovskaya // Nano-Design, Technology, Computer Simulation — NDTCS ’ 2013: proceedings of the 15th International Workshop on New Approaches to High-Tech, Minsk, June 11–15, 2013 / BSUIR. - Minsk, 2013. - P. 55 – 56. | ru_RU |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/33067 | - |
| dc.description.abstract | The electric conduction of a single fullerene molecule and chains of fullerenes placed between two
metal electrodes was simulated. The electric current was calculated as a function of the bias voltage using the
Landauer approach, which connects charge transport with the transmission of electrons. To obtain the
transmission function, the supplementary problem of the electron tunneling coupled with its scattering by the
fullerenes was solved. It has been shown that the current - voltage characteristics of such structures can have
negative-conductance regions that makes it possible to use them as active components of nanoelectronic
devices. As an example, the operation of the oscillator including the single fullerene-based component has
been demonstrated. The interpretation of the phenomenon has been discussed. | ru_RU |
| dc.language.iso | en | ru_RU |
| dc.publisher | БГУИР | ru_RU |
| dc.subject | материалы конференций | ru_RU |
| dc.subject | current–voltage characteristics | ru_RU |
| dc.subject | Landauer approach | ru_RU |
| dc.title | Fullerene-based systems as components of nanoelectronic devices | ru_RU |
| dc.type | Статья | ru_RU |
| Appears in Collections: | NDTCS 2013
|
