| DC Field | Value | Language |
|---|
| dc.contributor.author | Nelayev, V. | - |
| dc.contributor.author | Tran Tuan Trung | - |
| dc.date.accessioned | 2018-10-01T08:04:01Z | - |
| dc.date.available | 2018-10-01T08:04:01Z | - |
| dc.date.issued | 2013 | - |
| dc.identifier.citation | Nelayev, V. Concept of new compact model of deep-submicron MOSFET / V. Nelayev, Tran Tuan Trung // Nano-Design, Technology, Computer Simulation — NDTCS ’ 2013: proceedings of the 15th International Workshop on New Approaches to High-Tech, Minsk, June 11–15, 2013 / Belarusian State University of Informatics and Radioelectronics ; ed.: A. Melker, V. Nelayev, V. Stempitsky. – Minsk, 2013. – P. 70–72. | ru_RU |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/33073 | - |
| dc.description.abstract | Concept of new compact model for the simulation of deep submicron (DSM), nanometer-scale
MOFFET transistor characteristics is presented. The proposed model is based on the use of traditional
“compact” submicron MOSFET device model. Parameters of this model are verified by means of fitting
procedure to results obtained by use exact physical models taking into account quantum effects
accompanying charge carriers transfer in DSM MOSFET. | ru_RU |
| dc.language.iso | en | ru_RU |
| dc.publisher | БГУИР | ru_RU |
| dc.subject | материалы конференций | ru_RU |
| dc.subject | deep submicron | ru_RU |
| dc.subject | submicron MOSFET | ru_RU |
| dc.title | Concept of new compact model of deep-submicron MOSFET | ru_RU |
| dc.type | Статья | ru_RU |
| Appears in Collections: | NDTCS 2013
|
