| DC Field | Value | Language |
|---|
| dc.contributor.author | Koleshko, V. M. | - |
| dc.contributor.author | Gulay, A. | - |
| dc.contributor.author | Gulay, V. | - |
| dc.contributor.author | Bobachenok, I. | - |
| dc.contributor.author | Kozlova, O. | - |
| dc.contributor.author | Nelayev, V. V. | - |
| dc.date.accessioned | 2018-10-01T09:49:35Z | - |
| dc.date.available | 2018-10-01T09:49:35Z | - |
| dc.date.issued | 2013 | - |
| dc.identifier.citation | Ab-initio simulation of vanadium oxide electronic properties / V. Koleshko [et al.] // Nano-Design, Technology, Computer Simulation — NDTCS ’ 2013: proceedings of the 15th International Workshop on New Approaches to High-Tech, Minsk, June 11–15, 2013 / Belarusian State University of Informatics and Radioelectronics ; ed.: A. Melker, V. Nelayev, V. Stempitsky. – Minsk, 2013. – P. 118–119. | ru_RU |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/33087 | - |
| dc.description.abstract | The modeling of the electronic properties of vanadium oxides with the effect of the Mott—
Hubbard was conducted. Software package VASP was used as the simulation tool, in particular,r method of
augmented plane wave (PAW-method). Calculated electron densities and the band structures of vanadium
compounds of homologous series VnOn+1 and VnOn-1 are presented. | ru_RU |
| dc.language.iso | en | ru_RU |
| dc.publisher | БГУИР | ru_RU |
| dc.subject | материалы конференций | ru_RU |
| dc.subject | VASP | ru_RU |
| dc.subject | PAW-method | ru_RU |
| dc.title | Ab-initio simulation of vanadium oxide electronic properties | ru_RU |
| dc.type | Статья | ru_RU |
| Appears in Collections: | NDTCS 2013
|
