DC Field | Value | Language |
dc.contributor.author | Muratova, E. N. | - |
dc.contributor.author | Moshnikov, V. A. | - |
dc.contributor.author | Luchinin, V. V. | - |
dc.contributor.author | Bobkov, A. A. | - |
dc.contributor.author | Vrublevsky, I. A. | - |
dc.contributor.author | Chernyakova, E. V. | - |
dc.contributor.author | Terukov, E. I. | - |
dc.date.accessioned | 2018-12-21T09:03:12Z | - |
dc.date.available | 2018-12-21T09:03:12Z | - |
dc.date.issued | 2018 | - |
dc.identifier.citation | Thermal-Conductive Boards Based on Aluminum with an Al2O3 Nanostructured Layer for Products of Power Electronics / E. N. Muratova and other // Technical Physics. – 2018. – Vol 63, № 11. – P. 1626 – 1628. – DOI: 10.1134/S1063784218110191. | ru_RU |
dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/33941 | - |
dc.description.abstract | The experimental results of electrical and thermal characteristics of circuit boards based on aluminum with a nanostructured layer of anodic aluminum oxide and copper conductors for assembling highpower field-effect transistors have been considered. It has been shown that the presence of a thin dielectric
layer and thick aluminum base with high thermal conductivity provides a uniform distribution of heat generated by the active element over the entire volume of the board without formation of local regions with
increased temperature. The experimental results have shown that the temperature gradient between the heat
source and anodic aluminum oxide surface is about 17–18°C at a surface heat power of 4.4 W/cm2. | ru_RU |
dc.language.iso | en | ru_RU |
dc.publisher | Pleiades Publishing | ru_RU |
dc.subject | публикации ученых | ru_RU |
dc.subject | thermal characteristics | ru_RU |
dc.subject | nanostructured layer | ru_RU |
dc.title | Thermal-Conductive Boards Based on Aluminum with an Al2O3 Nanostructured Layer for Products of Power Electronics | ru_RU |
dc.type | Статья | ru_RU |
Appears in Collections: | Публикации в зарубежных изданиях
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