Formation of metal-oxide film nanostructures based on anodic alumina with uniformly distributed nanoscale Ta inclusions and their electrical properties

Abstract

The paper presents the results of studies of the formation of film-metal oxide nanostructures with islet tantalum inclusions on the basis of anodizing processes of bilayer Ta-Al films. The surface resistivity and the temperature coefficient of resistance of such nanostructures were studied. The results obtained show that the proposed method allows us to copy completely the cellular-porous structure of anodic alumina and to form a nanostructured tantalum film of islet character with a dielectric phase in places of pores.