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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/34035
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dc.contributor.authorSkachkova, V. A.-
dc.contributor.authorBaranava, M. S.-
dc.contributor.authorHvazdouski, D. C.-
dc.contributor.authorStempitsky, V. R.-
dc.date.accessioned2019-01-03T11:44:01Z-
dc.date.available2019-01-03T11:44:01Z-
dc.date.issued2017-
dc.identifier.citationElectronic properties of graphene-based heterostructures / V. A. Skachkova and other // Journal of Physics: Conference Series. – 2017. – 917. – P. 092012. – doi :10.1088/1742-6596/917/9/092012.ru_RU
dc.identifier.urihttps://libeldoc.bsuir.by/handle/123456789/34035-
dc.description.abstractHeterostructures based on graphene were investigated by using density function theory (DFT). It is found that energy gap appear in ZnS-graphene heterostructure. Heterostructures graphene-ZnO and graphene-phosphorene have almost zero-band gap. Binding energy between heterostructure layers was determined.ru_RU
dc.language.isoenru_RU
dc.publisherIOPscienceru_RU
dc.subjectпубликации ученыхru_RU
dc.subjectab initio simulationru_RU
dc.subjectDFTru_RU
dc.subjectdichalcogenideru_RU
dc.subjectgrapheneru_RU
dc.subjectheterostructureru_RU
dc.subjectZnSru_RU
dc.subjectZnOru_RU
dc.titleElectronic properties of graphene-based heterostructuresru_RU
dc.typeСтатьяru_RU
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