DC Field | Value | Language |
dc.contributor.author | Zhikol, O. A. | - |
dc.contributor.author | Luzanov, A. V. | - |
dc.contributor.author | Omelchenko, I. V. | - |
dc.contributor.author | Pushkarchuk, A. L. | - |
dc.contributor.author | Pushkarchuk, V. A. | - |
dc.contributor.author | Nizovstev, A. P. | - |
dc.contributor.author | Kilin, S. Ya. | - |
dc.contributor.author | Bezyazychnaya, T. V. | - |
dc.contributor.author | Kuten', S.A. | - |
dc.date.accessioned | 2019-01-08T12:59:29Z | - |
dc.date.available | 2019-01-08T12:59:29Z | - |
dc.date.issued | 2018 | - |
dc.identifier.citation | Use of density functional theory for modeling optical properties of vacancy defects in nanoclusters of various SiC polytypes / O. A. Zhikol and other // Functional Materials. – 2018. – №25(2). – P. 337 – 341. – DOI: 10.15407/fm25.02.337. | ru_RU |
dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/34083 | - |
dc.description.abstract | We studied electronic properties of the ground and lowest excited states of SiC defective nanoclusters falling into 3C, 2H and 4H polymorphic types. The standard time-dependent DFT method was used along with the economical model-core-potential approximation. Basing on our earlier works, we performed the corresponding excited state structural analysis and show for the lowest triplet-triplet transition a significant effect of excitation localization in the defect vicinity. | ru_RU |
dc.language.iso | en | ru_RU |
dc.publisher | Institute for Single Crystal | ru_RU |
dc.subject | публикации ученых | ru_RU |
dc.subject | nanoparticles | ru_RU |
dc.subject | carborundum polytypes | ru_RU |
dc.subject | density functional theory | ru_RU |
dc.subject | TDDFT | ru_RU |
dc.subject | model core potentials | ru_RU |
dc.subject | excited state localization | ru_RU |
dc.title | Use of density functional theory for modeling optical properties of vacancy defects in nanoclusters of various SiC polytypes | ru_RU |
dc.type | Статья | ru_RU |
Appears in Collections: | Публикации в зарубежных изданиях
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