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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/34083
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dc.contributor.authorZhikol, O. A.-
dc.contributor.authorLuzanov, A. V.-
dc.contributor.authorOmelchenko, I. V.-
dc.contributor.authorPushkarchuk, A. L.-
dc.contributor.authorPushkarchuk, V. A.-
dc.contributor.authorNizovstev, A. P.-
dc.contributor.authorKilin, S. Ya.-
dc.contributor.authorBezyazychnaya, T. V.-
dc.contributor.authorKuten', S.A.-
dc.date.accessioned2019-01-08T12:59:29Z-
dc.date.available2019-01-08T12:59:29Z-
dc.date.issued2018-
dc.identifier.citationUse of density functional theory for modeling optical properties of vacancy defects in nanoclusters of various SiC polytypes / O. A. Zhikol and other // Functional Materials. – 2018. – №25(2). – P. 337 – 341. – DOI: 10.15407/fm25.02.337.ru_RU
dc.identifier.urihttps://libeldoc.bsuir.by/handle/123456789/34083-
dc.description.abstractWe studied electronic properties of the ground and lowest excited states of SiC defective nanoclusters falling into 3C, 2H and 4H polymorphic types. The standard time-dependent DFT method was used along with the economical model-core-potential approximation. Basing on our earlier works, we performed the corresponding excited state structural analysis and show for the lowest triplet-triplet transition a significant effect of excitation localization in the defect vicinity.ru_RU
dc.language.isoenru_RU
dc.publisherInstitute for Single Crystal, Ukraineru_RU
dc.subjectпубликации ученыхru_RU
dc.subjectnanoparticlesru_RU
dc.subjectcarborundum polytypesru_RU
dc.subjectdensity functional theoryru_RU
dc.subjectTDDFTru_RU
dc.subjectmodel core potentialsru_RU
dc.subjectexcited state localizationru_RU
dc.titleUse of density functional theory for modeling optical properties of vacancy defects in nanoclusters of various SiC polytypesru_RU
dc.typeСтатьяru_RU
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