| DC Field | Value | Language |
|---|
| dc.contributor.author | Krivosheeva, A. V. | - |
| dc.contributor.author | Shaposhnikov, V. L. | - |
| dc.contributor.author | Borisenko, V. E. | - |
| dc.contributor.author | Lazzari, J. L. | - |
| dc.date.accessioned | 2019-11-27T12:40:07Z | - |
| dc.date.available | 2019-11-27T12:40:07Z | - |
| dc.date.issued | 2019 | - |
| dc.identifier.citation | Electronic properties of WS2/WSe2 heterostructure containing Te impurity: the role of substituting position / A. V. Krivosheeva, V. L. Shaposhnikov, V. E. Borisenko, J.-L. Lazzari // International Journal of Nanoscience. – 2019. – Vol. 18, № 3-4. – P. 1940007-1-1940007-4. – DOI : 10.1142/S0219581X19400076. | ru_RU |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/37558 | - |
| dc.description.abstract | An impact of positions of Te atoms substituting W atoms in two-dimensional WS2/WSe2 heterostructures on their electronic properties is investigated by theoretical simulation. The substitution of W by Te tends to reduce the energy band gap and can lead to metallic properties depending on the impurity position and concentration. | ru_RU |
| dc.language.iso | en | ru_RU |
| dc.publisher | World Scientic Publishing Company | ru_RU |
| dc.subject | публикации ученых | ru_RU |
| dc.subject | 2D heterostructure | ru_RU |
| dc.subject | dichalcogenide | ru_RU |
| dc.subject | electronic property | ru_RU |
| dc.subject | impurity | ru_RU |
| dc.subject | substituting position | ru_RU |
| dc.title | Electronic properties of WS2/WSe2 heterostructure containing Te impurity: the role of substituting position | ru_RU |
| dc.type | Статья | ru_RU |
| Appears in Collections: | Публикации в зарубежных изданиях
|
