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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/37640
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dc.contributor.authorTrafimenko, A. G.-
dc.contributor.authorPodryabinkin, D. A.-
dc.contributor.authorDanilyuk, A. L.-
dc.date.accessioned2019-12-03T11:29:15Z-
dc.date.available2019-12-03T11:29:15Z-
dc.date.issued2019-
dc.identifier.citationTrafimenko, A. G. Field Emission in Silicon Vacuum Nanostructure / A. G. Trafimenko, D. A. Podryabinkin, A. L. Danilyuk // International Journal of Nanoscience. – 2019 – Vol. 18, № 3-4. – P. 1940092-1-1940092 -4. – DOI: 10.1142/s0219581x19400921.ru_RU
dc.identifier.urihttps://libeldoc.bsuir.by/handle/123456789/37640-
dc.description.abstractTransmission coefficient and field emission current in a silicon vacuum nanostructure with a pyramidal cathode were calculated as a function of applied voltage, size of the cathode and distance between the anode and cathode by the phase function method. The field emission current density in the range of 1–10 A/cm2 was found to be achieved by varying the distance between the anode and cathode in the range of 15–25nm and the applied voltage in the range of 1.2–2.3V.ru_RU
dc.language.isoenru_RU
dc.publisherWorld Scientific Publishing Co Pte Ltdru_RU
dc.subjectпубликации ученыхru_RU
dc.subjectvacuum nanostructureru_RU
dc.subjectfield emissionru_RU
dc.subjectphase functionru_RU
dc.subjectpyramidal cathoderu_RU
dc.subjectelectron tunnelingru_RU
dc.subjecttransmission coefficientru_RU
dc.subjectamplification coefficientru_RU
dc.titleField Emission in Silicon Vacuum Nanostructureru_RU
dc.typeСтатьяru_RU
Appears in Collections:Публикации в зарубежных изданиях

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