C-V characterization and electric parameters of ZrO2 received by UV stimulated plasma anodizing

Abstract

Low temperature technologies creating metals oxides are a promising solution for formation integral circuit elements. In this report the electric properties of zirconia (ZrO2) received by low temperature (~400oC) UV stimulated plasma anodizing have been investigated. Zirconia is a potential high-k dielectric material with potential applications as a gate insulator in transistors. This dielectric distinguished by good electric parameters. For this purpose, we used C-V characterization technique and calculate dielectric constant, flatband voltage, threshold voltage, bulk potential, work function, oxide effective charge, charge concentration. The C-V measurement was carried out on Keithley Instrument Semiconductor Parameter Analyzer 4200, oxide thickness was measured by reflectometer – MprobeVis System.