| DC Field | Value | Language |
|---|
| dc.contributor.author | Sun, S. M. | - |
| dc.contributor.author | Liu, W. J. | - |
| dc.contributor.author | Golosov, D. A. | - |
| dc.contributor.author | Gu, C. J. | - |
| dc.contributor.author | Ding, S. J. | - |
| dc.date.accessioned | 2020-01-17T09:32:53Z | - |
| dc.date.available | 2020-01-17T09:32:53Z | - |
| dc.date.issued | 2019 | - |
| dc.identifier.citation | Investigation of energy band at atomic layer deposited AZO/β-Ga2O3(201) heterojunctions / Sun S. M. [and others] // Nanoscale research letters. – 2019. – Vol. 14, № 1. – P. 275 – 280. – DOI: https://doi.org/10.1186/s11671-019-3092-x. | ru_RU |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/38238 | - |
| dc.description.abstract | The Al-doped effects on the band offsets of ZnO/β-Ga2O3 interfaces are characterized by X-ray photoelectron spectroscopy and calculated by first-principle simulations. The conduction band offsets vary from 1.39 to 1.67 eV, the valence band offsets reduce from 0.06 to − 0.42 eV, exhibiting an almost linear dependence with respect to the Al doping ratio varying from 0 to 10%. Consequently, a type-I band alignment forms at the interface of ZnO/β-Ga2O3 heterojunction and the AZO/β-Ga2O3 interface has a type-II band alignment. This is because incorporating Al into the ZnO would open up the band gaps due to the strong Al and O electron mixing, and the conduction and valence band edges consequently shift toward the lower level. | ru_RU |
| dc.language.iso | en | ru_RU |
| dc.publisher | Springer Science+Business Media | ru_RU |
| dc.subject | публикации ученых | ru_RU |
| dc.subject | β-Ga2O3 | ru_RU |
| dc.subject | Contacts | ru_RU |
| dc.subject | Intermediate semiconductor layer | ru_RU |
| dc.title | Investigation of energy band at atomic layer deposited AZO/β-Ga2O3(201) heterojunctions | ru_RU |
| dc.type | Статья | ru_RU |
| Appears in Collections: | Публикации в зарубежных изданиях
|
