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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/38500
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dc.contributor.authorRudenko, M. V.-
dc.contributor.authorKholov, P. A.-
dc.contributor.authorGaponenko, N. V.-
dc.contributor.authorMukhin, N. V.-
dc.contributor.authorIvanov, V. A.-
dc.contributor.authorStas’kov, N. I.-
dc.date.accessioned2020-02-05T07:57:08Z-
dc.date.available2020-02-05T07:57:08Z-
dc.date.issued2019-
dc.identifier.citationPhotocurrent hysterisis of strontium titanate formed on silicon by sol-gel method / Rudenko M. V. [and others] // International Journal of Nanoscience. – 2019. – Vol. 18, No. 3-4. – P. 1940090 (4 pages). – DOI: 10.1142/S0219581X19400908.ru_RU
dc.identifier.urihttps://libeldoc.bsuir.by/handle/123456789/38500-
dc.description.abstractSrTiO3 and SrTiO3:Nd films of 110nm and 210nm thickness were fabricated using the sol–gel technology on silicon. Their current–voltage characteristics were investigated with and without illumination. The film structures are photosensitive and exhibit the hysteresis on the forward and reverse bias with loop broadening at the reverse part.ru_RU
dc.language.isoenru_RU
dc.publisherWorld Scientific Publishingru_RU
dc.subjectпубликации ученыхru_RU
dc.subjectstrontium titanateru_RU
dc.subjectphotocurrentru_RU
dc.subjectsol–gelru_RU
dc.titlePhotocurrent hysterisis of strontium titanate formed on silicon by sol-gel methodru_RU
dc.typeСтатьяru_RU
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