| DC Field | Value | Language |
|---|
| dc.contributor.author | Volcheck, V. S. | - |
| dc.contributor.author | Stempitsky, V. R. | - |
| dc.date.accessioned | 2020-02-12T11:24:48Z | - |
| dc.date.available | 2020-02-12T11:24:48Z | - |
| dc.date.issued | 2019 | - |
| dc.identifier.citation | Volcheck, V. S. Leakage current in AlGaN Schottky diode in terms of the phonon-assisted tunneling model / V.S. Volcheck, V.R. Stempitsky // Materials Physics and Mechanics. – 2019. – №41(1). – С. 19 – 29. – DOI: http://dx.doi.org/10.18720/MPM.4112019_4. | ru_RU |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/38536 | - |
| dc.description.abstract | The leakage current in the AlGaN Schottky diode under a reverse bias is simulated and compared within the frameworks of the thermionic emission–diffusion and phonon-assisted tunneling models. It is shown that the phonon-assisted tunneling model is suitable to describe the reverse-bias characteristic of the AlGaN Schottky contact and can also be applied to calculate the gate leakage current in the AlGaN/GaN high electron mobility transistor. | ru_RU |
| dc.language.iso | en | ru_RU |
| dc.publisher | Peter the Great St. Petersburg Polytechnic University | ru_RU |
| dc.subject | публикации ученых | ru_RU |
| dc.subject | electron tunneling | ru_RU |
| dc.subject | leakage current | ru_RU |
| dc.subject | Schottky diode | ru_RU |
| dc.subject | thermionic emission | ru_RU |
| dc.title | Leakage current in AlGaN Schottky diode in terms of the phonon-assisted tunneling model | ru_RU |
| dc.type | Статья | ru_RU |
| Appears in Collections: | Публикации в зарубежных изданиях
|
