| DC Field | Value | Language |
|---|
| dc.contributor.author | Dao Dinh Ha | - |
| dc.contributor.author | Trung Tran Tuan | - |
| dc.contributor.author | Volcheck, V. S. | - |
| dc.contributor.author | Stempitsky, V. R. | - |
| dc.date.accessioned | 2020-02-12T12:07:56Z | - |
| dc.date.available | 2020-02-12T12:07:56Z | - |
| dc.date.issued | 2019 | - |
| dc.identifier.citation | Iron-induced acceptor centers in the gallium nitride high electron mobility transistor: thermal simulation and analysis / Dao Dinh Ha [and others] // International Conference on Advanced Technologies for Communications (ATC-2019): 12 th, The International Conference on Advanced Technologies for Communications, Hanoi, Vietnam, Oct. 17-19, 2019 / Institute of Electrical and Electronics Engineers (IEEE). – Hanoi, 2019. – P. 308 – 312. – DOI: https://doi.org/10.1109/ATC.2019.8924506. | ru_RU |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/38540 | - |
| dc.description.abstract | The effect of the presence of iron-induced acceptor centers in the gallium nitride high electron mobility transistor is studied using device physics simulations at elevated temperatures (up to 600 K), as a lattice heat flow equation is solved self-consistently with the Poisson and the continuity equations to account for self-heating effects. It is shown that the acceptor centers intentionally introduced in the buffer layer of the device cause a shift of the input characteristics in the positive direction. | ru_RU |
| dc.language.iso | en | ru_RU |
| dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) | ru_RU |
| dc.subject | публикации ученых | ru_RU |
| dc.subject | gallium nitride | ru_RU |
| dc.subject | trap | ru_RU |
| dc.subject | transistor | ru_RU |
| dc.subject | simulation | ru_RU |
| dc.title | Iron-induced acceptor centers in the gallium nitride high electron mobility transistor: thermal simulation and analysis | ru_RU |
| dc.type | Статья | ru_RU |
| Appears in Collections: | Публикации в зарубежных изданиях
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