| DC Field | Value | Language |
|---|
| dc.contributor.author | Lovshenko, I. Yu. | - |
| dc.contributor.author | Khanko, V. T. | - |
| dc.contributor.author | Stempitsky, V. R. | - |
| dc.date.accessioned | 2020-02-12T12:18:32Z | - |
| dc.date.available | 2020-02-12T12:18:32Z | - |
| dc.date.issued | 2019 | - |
| dc.identifier.citation | Lovshenko, I. Yu. Physic-topological (electrical) model of a junction field effect transistor, taking into account the degradation of operational characteristics under the influence of penetrating radiation / Lovshenko I. Yu., Khanko V. T., Stempitsky V. R. // Microwave & Telecommunication Technology: 29th International Crimean Conference. – 2019. – №30. – P. 10002. – DOI: https://doi.org/10.1051/itmconf/20193010002. | ru_RU |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/38541 | - |
| dc.description.abstract | The results of applying the compact model of junction field effect transistors developed and integrated into the Cadence software product for control to evaluate the hardness of a two-stage differential amplifier circuit under the combined or separate exposure to fluences of electrons, protons and neutrons are presented. | ru_RU |
| dc.language.iso | en | ru_RU |
| dc.publisher | EDP Sciences | ru_RU |
| dc.subject | публикации ученых | ru_RU |
| dc.subject | JFET | ru_RU |
| dc.subject | SPICE | ru_RU |
| dc.subject | transistor | ru_RU |
| dc.subject | simulation | ru_RU |
| dc.subject | radiation | ru_RU |
| dc.title | Physic-topological (electrical) model of a junction field effect transistor, taking into account the degradation of operational characteristics under the influence of penetrating radiation | ru_RU |
| dc.type | Статья | ru_RU |
| Appears in Collections: | Публикации в зарубежных изданиях
|
