| DC Field | Value | Language |
|---|
| dc.contributor.author | Danilyuk, A. L. | - |
| dc.contributor.author | Prischepa, S. L. | - |
| dc.contributor.author | Trafimenko, A. G. | - |
| dc.contributor.author | Fedotov, A. K. | - |
| dc.contributor.author | Svito, I. A. | - |
| dc.contributor.author | Kargin, N. I. | - |
| dc.date.accessioned | 2020-05-15T07:20:09Z | - |
| dc.date.available | 2020-05-15T07:20:09Z | - |
| dc.date.issued | 2020 | - |
| dc.identifier.citation | Low temperature injected-caused charge carrier instability in n-type silicon below insulator-to-metal transition / A. L. Danilyuk [and other] // Journal of Physics Condensed Matter. – 2020. – Vol. 32. – P. 225702 (1-10). – 10.1088/1361-648X/ab720e. | ru_RU |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/38929 | - |
| dc.description.abstract | We report on the electric transport properties of Si heavily doped with Sb at concentration just below the insulator-to-metal transition in the temperature range 1.9 – 3.0 K for current density J < 0.2 A/cm2. | ru_RU |
| dc.language.iso | en | ru_RU |
| dc.publisher | Institute of Physics | ru_RU |
| dc.subject | публикации ученых | ru_RU |
| dc.subject | charge carrier instability | ru_RU |
| dc.subject | correlated electron system | ru_RU |
| dc.subject | upper Hubbard band | ru_RU |
| dc.subject | delocalization | ru_RU |
| dc.title | Low temperature injected-caused charge carrier instability in n-type silicon below insulator-to-metal transition | ru_RU |
| dc.type | Статья | ru_RU |
| Appears in Collections: | Публикации в зарубежных изданиях
|
