DC Field | Value | Language |
dc.contributor.author | Shulgov, V. V. | - |
dc.contributor.author | Shimanovich, D. L. | - |
dc.contributor.author | Yakovtseva, V. A. | - |
dc.contributor.author | Basov, G. | - |
dc.date.accessioned | 2020-12-11T06:42:03Z | - |
dc.date.available | 2020-12-11T06:42:03Z | - |
dc.date.issued | 2020 | - |
dc.identifier.citation | Internal Stress in Aluminum Layers Deposited on Dielectric Substrates / Shulgov V. [et al.] // Microelectronic Devices and Technologies Proceedings of the 3 rd International Conference on Microelectronic Devices and Technologies (MicDAT '2020), 22–23 October 2020 / ed.: S. Y. Yurish. – Barcelona, 2020. – P. 51–52. | ru_RU |
dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/41633 | - |
dc.description.abstract | The analysis of the internal stress in deposited aluminum layers is demonstrated and dependences of the internal stresses on the thickness of the aluminum films deposited at various substrate temperatures and evaporation rates are studied. The study may be applied to fabricate the nanoporous alumina coatings for different kinds of high-sensitive sensors. | ru_RU |
dc.language.iso | en | ru_RU |
dc.publisher | International Frequency Sensor Association (IFSA) Publishing | ru_RU |
dc.subject | публикации ученых | ru_RU |
dc.subject | anodic alumina | ru_RU |
dc.subject | membrane | ru_RU |
dc.subject | light scattering | ru_RU |
dc.subject | light propagation | ru_RU |
dc.title | Internal Stress in Aluminum Layers Deposited on Dielectric Substrates | ru_RU |
dc.type | Статья | ru_RU |
Appears in Collections: | Публикации в зарубежных изданиях
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