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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/41633
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dc.contributor.authorShulgov, V. V.-
dc.contributor.authorShimanovich, D. L.-
dc.contributor.authorYakovtseva, V. A.-
dc.contributor.authorBasov, G.-
dc.date.accessioned2020-12-11T06:42:03Z-
dc.date.available2020-12-11T06:42:03Z-
dc.date.issued2020-
dc.identifier.citationInternal Stress in Aluminum Layers Deposited on Dielectric Substrates / Shulgov V. [et al.] // Microelectronic Devices and Technologies Proceedings of the 3 rd International Conference on Microelectronic Devices and Technologies (MicDAT '2020), 22–23 October 2020 / ed.: S. Y. Yurish. – Barcelona, 2020. – P. 51–52.ru_RU
dc.identifier.urihttps://libeldoc.bsuir.by/handle/123456789/41633-
dc.description.abstractThe analysis of the internal stress in deposited aluminum layers is demonstrated and dependences of the internal stresses on the thickness of the aluminum films deposited at various substrate temperatures and evaporation rates are studied. The study may be applied to fabricate the nanoporous alumina coatings for different kinds of high-sensitive sensors.ru_RU
dc.language.isoenru_RU
dc.publisherInternational Frequency Sensor Association (IFSA) Publishingru_RU
dc.subjectпубликации ученыхru_RU
dc.subjectanodic aluminaru_RU
dc.subjectmembraneru_RU
dc.subjectlight scatteringru_RU
dc.subjectlight propagationru_RU
dc.titleInternal Stress in Aluminum Layers Deposited on Dielectric Substratesru_RU
dc.typeСтатьяru_RU
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