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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/42355
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dc.contributor.authorBaranava, M. S.-
dc.contributor.authorHvazdouski, D. C.-
dc.contributor.authorVolcheck, V. S.-
dc.contributor.authorStempitsky, V. R.-
dc.contributor.authorDinh, D.-
dc.contributor.authorTran Tuan, T.-
dc.date.accessioned2021-01-11T07:46:18Z-
dc.date.available2021-01-11T07:46:18Z-
dc.date.issued2020-
dc.identifier.citationGaN HEMT Thermal Characteristics Evaluation Using an Integrated Approach Based on the Combined Use of First-Principles and Device Simulations / M. Baranаva [et. al.] // IEEE ATC 2020 : International Conference on Advanced Technologies for Communications, Nha Trang, 8–10 October 2020 / IEEE Communications Society. – Nha Trang, 2020. – P. 65–69. – DOI: 10.1109/ATC50776.2020.9255446.ru_RU
dc.identifier.urihttps://libeldoc.bsuir.by/handle/123456789/42355-
dc.description.abstractGaN HEMT thermal characteristics evaluation using computer calculation has been carry out. Calculation were using an proposed integrated approach based on the combined use of first-principles and device simulations. Such method is necessary when some parameters for device simulation are impossible is obtained due different reasons. Thermal conductivity is one of the input parameters of the heat flow equation and is known to be strongly temperature-dependent. This is critical to take into account during simulation, as the developed temperature due to self-heating is very sensitive to thermal conductivities of certain areas of the device.ru_RU
dc.language.isoenru_RU
dc.publisherEDAS Conference Services LLC, СШАru_RU
dc.subjectпубликации ученыхru_RU
dc.subjectthermal conductivityru_RU
dc.subjectfirst-principles calculationsru_RU
dc.subjectdevice simulationru_RU
dc.titleGaN HEMT Thermal Characteristics Evaluation Using an Integrated Approach Based on the Combined Use of First-Principles and Device Simulationsru_RU
dc.typeСтатьяru_RU
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