| DC Field | Value | Language |
|---|
| dc.contributor.author | Baglov, A. V. | - |
| dc.contributor.author | Chubenko, E. B. | - |
| dc.contributor.author | Hnitsko, A. A. | - |
| dc.contributor.author | Borisenko, V. E. | - |
| dc.contributor.author | Malashevich, A. A. | - |
| dc.contributor.author | Uglov, V. V. | - |
| dc.date.accessioned | 2021-01-21T08:48:24Z | - |
| dc.date.available | 2021-01-21T08:48:24Z | - |
| dc.date.issued | 2020 | - |
| dc.identifier.citation | Structural and Photoluminescence Properties
of Graphite-Like Carbon Nitride / A. V. Baglov [et. al.] // Semiconductors. – 2020. – Vol. 54, №. 2. – P. 226–230. – DOI: 10.1134/S1063782620020049. | ru_RU |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/42672 | - |
| dc.description.abstract | Interrelationship between the structure and optical properties of graphite-like semiconductor carbon nitride produced by the heat treatment of thiocarbamide in an oxygen-containing medium at temperatures in the range from 400C to 625C is established. It is found that the maximum of the photoluminescence band shifts from 417 to 494 nm and simultaneously broadens, as the temperature of synthesis is elevated to 625C. This effect is attributed to doping with oxygen and to the formation of defects as a consequence of decomposition of the already synthesized material with increasing temperature. | ru_RU |
| dc.language.iso | en | ru_RU |
| dc.publisher | Pleiades Publishing | ru_RU |
| dc.subject | публикации ученых | ru_RU |
| dc.subject | graphite-like carbon nitride | ru_RU |
| dc.subject | photoluminescence | ru_RU |
| dc.title | Structural and Photoluminescence Properties
of Graphite-Like Carbon Nitride | ru_RU |
| dc.type | Статья | ru_RU |
| Appears in Collections: | Публикации в зарубежных изданиях
|
