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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/42820
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dc.contributor.authorSuleymanov, S. X.-
dc.contributor.authorGremenok, V. F.-
dc.contributor.authorKhoroshko, V. V.-
dc.contributor.authorIvanov, V. A.-
dc.contributor.authorDyskin, V. G.-
dc.contributor.authorDjanklich, M. U.-
dc.contributor.authorKulagina, N. A.-
dc.date.accessioned2021-02-03T08:00:06Z-
dc.date.available2021-02-03T08:00:06Z-
dc.date.issued2020-
dc.identifier.citationOptical Characteristics of Antireflection Coatings Based on Al2O3-SiO2 for Silicon Solar Cells / S. X. Suleymanov [et. al.] // Journal of Applied Spectroscopy. – 2020. – № 87. – P. 720–723. – DOI: https://doi.org/10.1007/s10812-020-01060-9.ru_RU
dc.identifier.urihttps://libeldoc.bsuir.by/handle/123456789/42820-
dc.description.abstractThe results from modeling, manufacture, and investigation of the integral reflection coefficient (RS) of single-layer composite antireflection coatings of Al2O3–SiO2 for silicon solar cells with integral reflection coefficient RS ≤ 10% are presented. It was shown that for Al2O3 concentrations of 52–84 wt.%, SiO2 concentrations of 16–48 wt.%, and thickness of 53–97 nm the smallest values of RS are 73–77% for Al2O3 and 27–23% for SiO2 with thickness of 69–75 nm. It was shown experimentally that for layers with Al2O3:SiO2 = 75:25 wt.% with thickness of 72 nm RS = 3.53%, which is approximately half of the RS value for Si3N4.ru_RU
dc.language.isoenru_RU
dc.publisherSpringerru_RU
dc.subjectпубликации ученыхru_RU
dc.subjectsingle crystalsru_RU
dc.subjectband gapru_RU
dc.titleOptical Characteristics of Antireflection Coatings Based on Al2O3-SiO2 for Silicon Solar Cellsru_RU
dc.typeСтатьяru_RU
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