DC Field | Value | Language |
dc.contributor.author | Suleymanov, S. X. | - |
dc.contributor.author | Gremenok, V. F. | - |
dc.contributor.author | Khoroshko, V. V. | - |
dc.contributor.author | Ivanov, V. A. | - |
dc.contributor.author | Dyskin, V. G. | - |
dc.contributor.author | Djanklich, M. U. | - |
dc.contributor.author | Kulagina, N. A. | - |
dc.date.accessioned | 2021-02-03T08:00:06Z | - |
dc.date.available | 2021-02-03T08:00:06Z | - |
dc.date.issued | 2020 | - |
dc.identifier.citation | Optical Characteristics of Antireflection Coatings Based on Al2O3-SiO2 for Silicon Solar Cells / S. X. Suleymanov [et. al.] // Journal of Applied Spectroscopy. – 2020. – № 87. – P. 720–723. – DOI: https://doi.org/10.1007/s10812-020-01060-9. | ru_RU |
dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/42820 | - |
dc.description.abstract | The results from modeling, manufacture, and investigation of the integral reflection coefficient (RS) of single-layer composite antireflection coatings of Al2O3–SiO2 for silicon solar cells with integral reflection coefficient RS ≤ 10% are presented. It was shown that for Al2O3 concentrations of 52–84 wt.%, SiO2 concentrations of 16–48 wt.%, and thickness of 53–97 nm the smallest values of RS are 73–77% for Al2O3 and 27–23% for SiO2 with thickness of 69–75 nm. It was shown experimentally that for layers with Al2O3:SiO2 = 75:25 wt.% with thickness of 72 nm RS = 3.53%, which is approximately half of the RS value for Si3N4. | ru_RU |
dc.language.iso | en | ru_RU |
dc.publisher | Springer | ru_RU |
dc.subject | публикации ученых | ru_RU |
dc.subject | single crystals | ru_RU |
dc.subject | band gap | ru_RU |
dc.title | Optical Characteristics of Antireflection Coatings Based on Al2O3-SiO2 for Silicon Solar Cells | ru_RU |
dc.type | Статья | ru_RU |
Appears in Collections: | Публикации в зарубежных изданиях
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