| DC Field | Value | Language |
|---|
| dc.contributor.author | Kistanov, A. A. | - |
| dc.contributor.author | Wei Cao | - |
| dc.contributor.author | Khadiullin, S. K. | - |
| dc.contributor.author | Korznikova, E. A. | - |
| dc.contributor.author | Smirnov, A. | - |
| dc.contributor.author | Xinghui Wang | - |
| dc.contributor.author | Zhuk, S. | - |
| dc.date.accessioned | 2021-02-23T10:53:09Z | - |
| dc.date.available | 2021-02-23T10:53:09Z | - |
| dc.date.issued | 2020 | - |
| dc.identifier.citation | Impact of various dopant elements on the electronic structure of Cu2ZnSnS4 (CZTS) thin films: a DFT study / Kistanov A. A. [et al.] // CrystEngComm. – 2020. – Vol. 22, № 35. – P. 5786–5791. – DOI: 10.1039/d0ce00802h. | ru_RU |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/43084 | - |
| dc.description.abstract | New structures made based on Cu2ZnSnS4 (CZTS) by substitutions with Cr, Ti, V, and Mo species were
investigated via density functional theory. The total substitution of Zn by Cr and V leads to the vanishing of
the bandgap, while n-type conductivity with a low bandgap of 0.19 eV was predicted in the case Ti. In addition, the conduction band minimum and valence band maximum overlapping were observed for the Mo/Sn ratio of 1/3. Therefore, our study suggests that even the low content of alternative cations in CZTS allows to control its band alignment. The obtained results can be helpful for designing CZTS-based intermediate layers to improve the quality of the back interface of the CZTS thin-film solar cells. | ru_RU |
| dc.language.iso | en | ru_RU |
| dc.publisher | Royal Society of Chemistry | ru_RU |
| dc.subject | публикации ученых | ru_RU |
| dc.subject | electronic structure | ru_RU |
| dc.subject | dopant elements | ru_RU |
| dc.subject | DFT study | ru_RU |
| dc.title | Impact of various dopant elements on the electronic structure of Cu2ZnSnS4 (CZTS) thin films: a DFT study | ru_RU |
| dc.type | Статья | ru_RU |
| Appears in Collections: | Публикации в зарубежных изданиях
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