| Поле DC | Значение | Язык |
|---|
| dc.contributor.author | Polyakov, I. S. | - |
| dc.date.accessioned | 2021-05-05T06:21:54Z | - |
| dc.date.available | 2021-05-05T06:21:54Z | - |
| dc.date.issued | 2021 | - |
| dc.identifier.citation | Polyakov, I. S. The influence of region sizes on the current-voltage characteristics of graphene-based four-barrier resonant tunnel structures / I. S. Polyakov // Электронные системы и технологии : сборник материалов 57-й научной конференции аспирантов, магистрантов и студентов БГУИР, Минск, 19-23 апреля 2021 г. / Белорусский государственный университет информатики и радиоэлектроники ; редкол.: Д. В. Лихаческий [и др.]. – Минск, 2021. – С. 129–130. | ru_RU |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/43412 | - |
| dc.description.abstract | This article discusses the concept, essence, and application areas of graphene-based four-barrier resonant tunnel structures. The purpose of this paper is to study the influence of various technological parameters on the electrical characteristics of the structure. The current-voltage characteristics of graphene-based resonant tunnel structures on silicon dioxide (SiO2) and hexagonal boron nitride (h-BN) substrates are modeled for different barrier widths and quantum wells. The calculations that were carried out using a numerical model based on the Schrodinger equation are presented. | ru_RU |
| dc.language.iso | en | ru_RU |
| dc.publisher | БГУИР | ru_RU |
| dc.subject | материалы конференций | ru_RU |
| dc.subject | tunnel structures | ru_RU |
| dc.subject | current-voltage characteristics | ru_RU |
| dc.subject | graphene | ru_RU |
| dc.title | The influence of region sizes on the current-voltage characteristics of graphene-based four-barrier resonant tunnel structures | ru_RU |
| dc.type | Статья | ru_RU |
| Располагается в коллекциях: | Электронные системы и технологии : материалы 57-й конференции аспирантов, магистрантов и студентов (2021)
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