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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/43412
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dc.contributor.authorPolyakov, I. S.-
dc.date.accessioned2021-05-05T06:21:54Z-
dc.date.available2021-05-05T06:21:54Z-
dc.date.issued2021-
dc.identifier.citationPolyakov, I. S. The influence of region sizes on the current-voltage characteristics of graphene-based four-barrier resonant tunnel structures / I. S. Polyakov // Электронные системы и технологии : сборник материалов 57-й научной конференции аспирантов, магистрантов и студентов БГУИР, Минск, 19-23 апреля 2021 г. / Белорусский государственный университет информатики и радиоэлектроники ; редкол.: Д. В. Лихаческий [и др.]. – Минск, 2021. – С. 129–130.ru_RU
dc.identifier.urihttps://libeldoc.bsuir.by/handle/123456789/43412-
dc.description.abstractThis article discusses the concept, essence, and application areas of graphene-based four-barrier resonant tunnel structures. The purpose of this paper is to study the influence of various technological parameters on the electrical characteristics of the structure. The current-voltage characteristics of graphene-based resonant tunnel structures on silicon dioxide (SiO2) and hexagonal boron nitride (h-BN) substrates are modeled for different barrier widths and quantum wells. The calculations that were carried out using a numerical model based on the Schrodinger equation are presented.ru_RU
dc.language.isoenru_RU
dc.publisherБГУИРru_RU
dc.subjectматериалы конференцийru_RU
dc.subjecttunnel structuresru_RU
dc.subjectcurrent-voltage characteristicsru_RU
dc.subjectgrapheneru_RU
dc.titleThe influence of region sizes on the current-voltage characteristics of graphene-based four-barrier resonant tunnel structuresru_RU
dc.typeСтатьяru_RU
Appears in Collections:Электронные системы и технологии : материалы 57-й конференции аспирантов, магистрантов и студентов (2021)

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