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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/44396
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dc.contributor.authorPolyakov, I. S.-
dc.contributor.authorПоляков, И. С.-
dc.date.accessioned2021-06-24T06:47:40Z-
dc.date.available2021-06-24T06:47:40Z-
dc.date.issued2021-
dc.identifier.citationPolyakov, I. S. The influence of region sizes on the current-voltage characteristics of graphene-based four-barrier resonant tunneling structures / Polyakov I. S. // Радиотехника и электроника : сборник тезисов докладов 57-й научной конференции аспирантов, магистрантов и студентов, Минск, апрель 2021 года / Белорусский государственный университет информатики и радиоэлектроники. – Минск : БГУИР, 2021. – С. 116–118.ru_RU
dc.identifier.urihttps://libeldoc.bsuir.by/handle/123456789/44396-
dc.description.abstractThis article discusses the concept, essence and application areas of graphene-based four-barrier resonant tunneling structures (RTS). The purpose of this paper is to study the influence of various technological parameters on the electrical characteristics of RTS. The current-voltage characteristics of graphene-based resonant tunneling structures on silicon dioxide (SiO 2 ) and hexagonal boron nitride (h-BN) substrates are simulated for different widths of barriers and quantum wells. The calculations presented were carried out using a numerical model based on the Schrödinger equation.ru_RU
dc.language.isoenru_RU
dc.publisherБГУИРru_RU
dc.subjectматериалы конференцийru_RU
dc.subjectresonant tunneling structuresru_RU
dc.subjectcurrent-voltage characteristicsru_RU
dc.subjectgrapheneru_RU
dc.titleThe influence of region sizes on the current-voltage characteristics of graphene-based four-barrier resonant tunneling structuresru_RU
dc.typeСтатьяru_RU
Appears in Collections:Радиотехника и электроника : материалы 57-й научной конференции аспирантов, магистрантов и студентов (2021)

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