| DC Field | Value | Language |
|---|
| dc.contributor.author | Golovach, A. I. | - |
| dc.contributor.author | Kovalchuk, N. G. | - |
| dc.contributor.author | Mikhalik, M. M. | - |
| dc.contributor.author | Kukuts, Y. | - |
| dc.contributor.author | Dronina, L. | - |
| dc.contributor.author | Komissarov, I. V. | - |
| dc.contributor.author | Prischepa, S. L. | - |
| dc.date.accessioned | 2021-11-04T11:13:34Z | - |
| dc.date.available | 2021-11-04T11:13:34Z | - |
| dc.date.issued | 2021 | - |
| dc.identifier.citation | Schottky barrier height and ideality factor of CVD graphene/n-Si heterojunction / A. Golovach [et. al.] // Nano-Desing, Tehnology, Computer Simulations=Нанопроектирование, технология, компьютерное моделирование (NDTCS-2021) : тезисы докладов XIX Международного симпозиума, Минск, 28-29 октября 2021 года / Белорусский государственный университет информатики и радиоэлектроники ; редкол.: В. А. Богуш [и др.]. – Минск, 2021. – P. 91–93. | ru_RU |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/45804 | - |
| dc.description.abstract | Due to high optical transparency and high charge mobility graphene emerges as a perspective material for transparent electrode in photodetectors. It made a new turn in using novel 2D materials in combination with the standard silicon technology. | ru_RU |
| dc.language.iso | en | ru_RU |
| dc.publisher | БГУИР | ru_RU |
| dc.subject | материалы конференций | ru_RU |
| dc.subject | conference proceedings | ru_RU |
| dc.subject | graphene | ru_RU |
| dc.subject | Schottky barrier | ru_RU |
| dc.title | Schottky barrier height and ideality factor of CVD graphene/n-Si heterojunction | ru_RU |
| dc.type | Статья | ru_RU |
| Appears in Collections: | NDTCS 2021
|
