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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/45843
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dc.contributor.authorLazarouk, S. K.-
dc.contributor.authorDudzich, U.-
dc.contributor.authorKliutski, A. Yu.-
dc.contributor.authorDolbik, A.-
dc.contributor.authorLabunov, V. A.-
dc.date.accessioned2021-11-08T06:58:35Z-
dc.date.available2021-11-08T06:58:35Z-
dc.date.issued2021-
dc.identifier.citationPhotosensitive properties of avalanche LEDs based on nanostructured silicon / S. Lazarouk [et. al.] // Nano-Desing, Tehnology, Computer Simulations=Нанопроектирование, технология, компьютерное моделирование (NDTCS-2021) : тезисы докладов XIX Международного симпозиума, Минск, 28-29 октября 2021 года / Белорусский государственный университет информатики и радиоэлектроники ; редкол.: В. А. Богуш [и др.]. – Минск, 2021. – P. 79–80.ru_RU
dc.identifier.urihttps://libeldoc.bsuir.by/handle/123456789/45843-
dc.description.abstractAvalanche LEDs have attracted the attention of scientific community due to their fast time response (less than 1 ps). It allows to use avalanche LEDs for optical interconnects in silicon chips and between silicon chips. In this case avalanched LEDs can be used as light sources as well as light detectors. We have studied the photosensitive properties of avalanched LEDs in this work.ru_RU
dc.language.isoenru_RU
dc.publisherБГУИР, РБru_RU
dc.subjectматериалы конференцийru_RU
dc.subjectconference proceedingsru_RU
dc.subjectavalanche LEDsru_RU
dc.subjectnanostructured siliconru_RU
dc.titlePhotosensitive properties of avalanche LEDs based on nanostructured siliconru_RU
dc.typeСтатьяru_RU
Appears in Collections:NDTCS 2021

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