Skip navigation
Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/45847
Full metadata record
DC FieldValueLanguage
dc.contributor.authorLovshenko, I.-
dc.contributor.authorVoronov, A.-
dc.contributor.authorRoshchenko, P. S.-
dc.contributor.authorTernov, R.-
dc.contributor.authorStempitsky, V. R.-
dc.date.accessioned2021-11-08T07:31:29Z-
dc.date.available2021-11-08T07:31:29Z-
dc.date.issued2021-
dc.identifier.citationThe proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs / I. Lovshenko [et. al.] // Nano-Desing, Tehnology, Computer Simulations=Нанопроектирование, технология, компьютерное моделирование (NDTCS-2021) : тезисы докладов XIX Международного симпозиума, Минск, 28-29 октября 2021 года / Белорусский государственный университет информатики и радиоэлектроники ; редкол.: В. А. Богуш [и др.]. – Минск, 2021. – P. 66–68.ru_RU
dc.identifier.urihttps://libeldoc.bsuir.by/handle/123456789/45847-
dc.description.abstractThe model of the dependence of NIEL on the proton energy with different values of threshold energy of defect formation for GaAs and AlGaAs, that are described in the literature and comply with the latest theoretical and experimental data, has been developed.ru_RU
dc.language.isoenru_RU
dc.publisherБГУИРru_RU
dc.subjectматериалы конференцийru_RU
dc.subjectconference proceedingsru_RU
dc.subjectthe proton fluxru_RU
dc.subjectexperimental dataru_RU
dc.titleThe proton flux influence on electrical characteristics of a dual-channel hemt based on GaAsru_RU
dc.typeСтатьяru_RU
Appears in Collections:NDTCS 2021

Files in This Item:
File Description SizeFormat 
Lovshenko_The.pdf602.05 kBAdobe PDFView/Open
Show simple item record


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.