| DC Field | Value | Language |
|---|
| dc.contributor.author | Miskiewicz, S. | - |
| dc.contributor.author | Komarov, A. | - |
| dc.contributor.author | Komarov, F. | - |
| dc.contributor.author | Yuvchenko, V. | - |
| dc.contributor.author | Zayats, G. | - |
| dc.date.accessioned | 2021-11-08T08:11:28Z | - |
| dc.date.available | 2021-11-08T08:11:28Z | - |
| dc.date.issued | 2021 | - |
| dc.identifier.citation | Simulation of radiation damage of the semiconductor devices / S. Miskiewicz [et al.] // Nano-Desing, Tehnology, Computer Simulations = Нанопроектирование, технология, компьютерное моделирование (NDTCS-2021) : тезисы докладов XIX Международного симпозиума, Минск, 28–29 октября 2021 г. / Белорусский государственный университет информатики и радиоэлектроники ; редкол.: В. А. Богуш [и др.]. – Минск, 2021. – P. 74–75. | ru_RU |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/45851 | - |
| dc.description.abstract | Semiconductor devices are extensively used in many sectors of modern electronics. Operation under irradiation can be impossible through their high radiation sensitivity. To forecast their radiation hardness it is important to develop efficient models of radiation effects on semiconductors. In this paper, the model of integral n-p-n BJT operating in radiation environment is considered. | ru_RU |
| dc.language.iso | en | ru_RU |
| dc.publisher | БГУИР | ru_RU |
| dc.subject | материалы конференций | ru_RU |
| dc.subject | conference proceedings | ru_RU |
| dc.subject | semiconductor devices | ru_RU |
| dc.subject | electronics | ru_RU |
| dc.title | Simulation of radiation damage of the semiconductor devices | ru_RU |
| dc.type | Статья | ru_RU |
| Appears in Collections: | NDTCS 2021
|
