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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/46664
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dc.contributor.authorMuratova, E.-
dc.contributor.authorVrublevsky, I. A.-
dc.contributor.authorChernyakova, E. V.-
dc.contributor.authorLushpa, N. V.-
dc.contributor.authorNalimova, S.-
dc.contributor.authorMoshnikov, V.-
dc.date.accessioned2022-02-07T11:07:06Z-
dc.date.available2022-02-07T11:07:06Z-
dc.date.issued2021-
dc.identifier.citationStudy of Structural Parameters of Porous Anodic Aluminum Oxide Depending on Electrolyte Temperature / E. Muratova [et al.] // Conference Proceeding of 2021 International Conference on Information Technology and Nanotechnology (ITNT), USA, 20-24 Sept. 2021 / Institute of Electrical and Electronics Engineers. – USA, 2021. – P. 1–4. – DOI: 10.1109/ITNT52450.2021.9649218.ru_RU
dc.identifier.urihttps://libeldoc.bsuir.by/handle/123456789/46664-
dc.description.abstractThe results of studies on the effect of electrolyte temperature during anodizing of thin aluminum films on SiO 2 -Si plates on the morphology of porous anodic alumina (PAA) films are presented. The pore diameter and interpore distance were determined by computer analysis of SEM images of the morphology of the anode films. The data obtained showed that the pore diameter doesn’t depend on the temperature of oxalic acid solution and the time of the process, but is determined only by the anodizing voltage. For anodizing mode at 30 V with an electrolyte temperature in the range of 5-40 °C, the pore diameter of the PAA films was 20 ± 0.5 nm, and the interpore distance was about 77.7 ± 1.0 nm.ru_RU
dc.language.isoenru_RU
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)ru_RU
dc.subjectпубликации ученыхru_RU
dc.subjectPorous oxide filmsru_RU
dc.subjectAnodic aluminaru_RU
dc.subjectCell morphologyru_RU
dc.subjectPore diameterru_RU
dc.subjectElectrolyte temperature effectru_RU
dc.titleStudy of Structural Parameters of Porous Anodic Aluminum Oxide Depending on Electrolyte Temperatureru_RU
dc.typeСтатьяru_RU
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