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dc.contributor.authorChubenko, E. B.-
dc.contributor.authorBaglov, A. V.-
dc.contributor.authorLeanenia, M. S.-
dc.contributor.authorUrmanov, B. D.-
dc.contributor.authorBorisenko, V. E.-
dc.identifier.citationBroad band photoluminescence of g-C3N4/ZnO/ZnS composite towards white light source / E. B. Chubenko [et al.] // Materials Science & Engineering B. – 2021. – Vol. 267. – P. 115109. – DOI: 10.1016/j.mseb.2021.115109.ru_RU
dc.description.abstractWe have found one step synthesized g–C3N4/ZnO/ZnS composite to be promising for engineering of white-light sources. The composite was fabricated by simultaneous pyrolytic decomposition of thiourea and zinc acetate with a consequent in situ polymerization of the products at 550–625 ◦C and characterized by SEM, XRD, EDX and low temperature PL spectroscopy. The composite synthesized at 550 ◦C demonstrates blue PL with a peak at 2.74 eV while higher temperatures of the synthesis result in a broad spectra with a maximum at 2.22 eV and comprise of the bands of g–C3N4 and mixed ZnO/ZnS as they have been resolved by low temperature PL. The proper selection of the synthesis temperature allows an extension of light emitting spectra of g–C3N4/ZnO/ZnS composites from blue to white light range. The results obtained show ternary systems containing g-C3N4 and wide band-gap semiconductors are suitable for white-light emitting and optoelectronic devices.ru_RU
dc.subjectпубликации ученыхru_RU
dc.subjectGraphitic carbon nitrideru_RU
dc.subjectZinc oxideru_RU
dc.subjectZinc sulfideru_RU
dc.subjectScanning electron microscopyru_RU
dc.titleBroad band photoluminescence of g-C3N4/ZnO/ZnS composite towards white light sourceru_RU
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