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dc.contributor.authorBodnar, I. V.-
dc.contributor.authorFeschenko, A. A.-
dc.contributor.authorKhoroshko, V. V.-
dc.contributor.authorPavlovskii, V. N.-
dc.contributor.authorSvitsiankou, I. E.-
dc.contributor.authorYablonskii, G. P.-
dc.identifier.citationTemperature dependence of AgIn13S20 single crystal band gap / I. V. Bodnar [et al.] // Exploratory Materials Science Research. – 2021. – Vol. 2, Issue 1. – P. 37–42. – DOI :
dc.description.abstractAgIn13S20 single crystals were grown by the vertical Bridgman method. The grown crystals composition was determined by X-ray spectroscopy analysis; the crystal structure was determined by X-ray method. It was shown, that AgIn13S20 compound crystallize in the cubic spinel structure. The band gaps of the obtained single crystals were estimated from transmittance spectra in the temperature range of 10-320 K. The band gap values decreased with temperature.ru_RU
dc.publisherKnowledge Empowerment Foundationru_RU
dc.subjectпубликации ученыхru_RU
dc.subjectBridgman methodru_RU
dc.subjectsingle crystalsru_RU
dc.subjectcrystal structureru_RU
dc.subjecttransmittance spectrumru_RU
dc.subjectband gapru_RU
dc.titleTemperature dependence of AgIn13S20 single crystal band gapru_RU
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