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dc.contributor.authorHa Dinh Dao-
dc.contributor.authorLovshenko, I. Yu.-
dc.contributor.authorRoshchenko, P. S.-
dc.contributor.authorShandarovich, V. T.-
dc.contributor.authorStempitsky, V. R.-
dc.contributor.authorTuan Trung Tran-
dc.identifier.citationComputer simulation of the operational characteristics of a microstrip silicon detector / Ha Dinh Dao [et al.] // Semiconductor Science and Technology. – 2021. – Vol. 36, № 9. – P. 1. – DOI : 10.1088/1361-6641/ac09cf.ru_RU
dc.description.abstractThis paper presents the results of preliminary device and technological simulation and optimization of the operational characteristics of semiconductor microstrip detectors. We investigated the influence of heavy charged particles with linear energy transfers of 1.81 MeV cm2 mg−1, 18.8 MeV cm2 mg−1 and 55.0 MeV cm2 mg−1, corresponding to nitrogen 15N+4 ions with an energy E = 1.87 MeV, iron 56Fe+15 ions with an energy E = 523 MeV and xenon 131Xe+35 ions with an energy E = 1217 MeV, as well as the angle of incidence of the particles and the temperature and voltage on the substrate, on the characteristics of the detector. To improve the characteristics of the detector, a screening experiment was carried out and a series of optimization calculations were performed. The results will be used for the manufacture and testing of design parameters for an experimental batch of the investigated devices.ru_RU
dc.publisherIOP Publishing, Великобританияru_RU
dc.subjectпубликации ученыхru_RU
dc.subjectlinear energy transferru_RU
dc.subjectmicrostrip detectorru_RU
dc.subjectsingle event upsetru_RU
dc.subjecttechnological and device simulationru_RU
dc.titleComputer simulation of the operational characteristics of a microstrip silicon detectorru_RU
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