| DC Field | Value | Language |
|---|
| dc.contributor.author | Gavrilin, I. M. | - |
| dc.contributor.author | Grevtsov, N. L. | - |
| dc.contributor.author | Pavlikov, A.V. | - |
| dc.contributor.author | Dronov, A. A. | - |
| dc.contributor.author | Chubenko, E. B. | - |
| dc.contributor.author | Bondarenko, V. P. | - |
| dc.contributor.author | Gavrilov, S. A. | - |
| dc.coverage.spatial | Netherlands | ru_RU |
| dc.date.accessioned | 2022-12-20T06:33:11Z | - |
| dc.date.available | 2022-12-20T06:33:11Z | - |
| dc.date.issued | 2022 | - |
| dc.identifier.citation | A new approach for producing of film structures based on Si-Ge / Gavrilin I. M. [et al.] // Materials Letters. – 2022. – Vol. 313. – P. 1–4. – DOI : 10.1016/j.matlet.2022.131802. | ru_RU |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/49509 | - |
| dc.description.abstract | In this work, we propose a new, previously unpresented in the literature, approach to the formation of Si1-xGex films. This approach includes electrochemical processes of the formation of porous silicon, electrochemical deposition of low-melting metals and Ge. Post-heat treatment is made possible to synthesize film structures based on Si1-xGex solid solutions. Using this approach an alloy of the composition Si0.4Ge0.6 has been obtained at a lower formation temperature than predicted by the phase diagram for the Si-Ge system. | ru_RU |
| dc.language.iso | en | ru_RU |
| dc.publisher | Elsevier | ru_RU |
| dc.subject | публикации ученых | ru_RU |
| dc.subject | electrodeposition | ru_RU |
| dc.subject | Si1-xGex films | ru_RU |
| dc.subject | germanium nanowires | ru_RU |
| dc.subject | porous silicon | ru_RU |
| dc.title | A new approach for producing of film structures based on Si1-xGex | ru_RU |
| dc.type | Article | ru_RU |
| Appears in Collections: | Публикации в зарубежных изданиях
|
