| DC Field | Value | Language |
|---|
| dc.contributor.author | Abramov, I. I. | - |
| dc.contributor.author | Labunov, V. A. | - |
| dc.contributor.author | Kalameitsava, N. V. | - |
| dc.contributor.author | Romanova, I. A. | - |
| dc.contributor.author | Shcherbakova, I. Y. | - |
| dc.coverage.spatial | Washington | ru_RU |
| dc.date.accessioned | 2022-12-27T09:02:21Z | - |
| dc.date.available | 2022-12-27T09:02:21Z | - |
| dc.date.issued | 2022 | - |
| dc.identifier.citation | Quantum drift-diffusion models for dual-gate field-effect transistors based on mono- and bilayer graphene / Abramov I. I. [et al.] // Proc. of SPIE. – Vol. 12157. – P. 121570X-1-6. – DOI : https://doi.org/10.1117/12.2622451. | ru_RU |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/49603 | - |
| dc.description.abstract | At present, a great deal of interest is observed in devices based
on two-dimentional (2D) materials, especially graphene, in the field of
micro- and nanoelectronics. Graphene has robust hoheycomb lattice
structure and unique properties such as ambipolarity, high carrier
mobility, high conductivity. Nevertheless the properties of mono- and
bilayer graphene are different. | ru_RU |
| dc.language.iso | en | ru_RU |
| dc.publisher | International Society for Optical Engineering | ru_RU |
| dc.subject | публикации ученых | ru_RU |
| dc.subject | field-effect transistor | ru_RU |
| dc.subject | monolayer graphene | ru_RU |
| dc.subject | bilayer graphene | ru_RU |
| dc.subject | simulation | ru_RU |
| dc.subject | output characteristics | ru_RU |
| dc.title | Quantum drift-diffusion models for dual-gate field-effect transistors based on mono- and bilayer graphene | ru_RU |
| dc.type | Article | ru_RU |
| Appears in Collections: | Публикации в зарубежных изданиях
|
