| DC Field | Value | Language |
|---|
| dc.contributor.author | Abramov, I. I. | - |
| dc.contributor.author | Labunov, V. A. | - |
| dc.contributor.author | Kalameitsava, N. V. | - |
| dc.contributor.author | Romanova, I. A. | - |
| dc.contributor.author | Shcherbakova, I. Y. | - |
| dc.coverage.spatial | Washington | ru_RU |
| dc.date.accessioned | 2022-12-27T09:06:56Z | - |
| dc.date.available | 2022-12-27T09:06:56Z | - |
| dc.date.issued | 2022 | - |
| dc.identifier.citation | Simulation of various nanoelectronic devices based on 2D materials / Abramov I. I. [et al.] // Proc. of SPIE. – Vol. 12157. – P. 121570U-1-9. – DOI : https://doi.org/10.1117/12.2622445. | ru_RU |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/49605 | - |
| dc.description.abstract | The development of field-effect transistors (FETs), resonant-
tunneling diodes (RTDs), vertical heterostructures and other device
structures on the basis of 2D materials is one of the important tasks for
producing a new element base for micro and nanoelectronics. | ru_RU |
| dc.language.iso | en | ru_RU |
| dc.publisher | International Society for Optical Engineering | ru_RU |
| dc.subject | публикации ученых | ru_RU |
| dc.subject | field-effect transistor | ru_RU |
| dc.subject | resonant tunneling diode | ru_RU |
| dc.subject | numerical simulation | ru_RU |
| dc.title | Simulation of various nanoelectronic devices based on 2D materials | ru_RU |
| dc.type | Article | ru_RU |
| Appears in Collections: | Публикации в зарубежных изданиях
|
