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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/53661
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dc.contributor.authorZiaziulia, P.-
dc.contributor.authorMalevich, V.-
dc.coverage.spatialМоскваen_US
dc.date.accessioned2023-11-16T08:27:44Z-
dc.date.available2023-11-16T08:27:44Z-
dc.date.issued2022-
dc.identifier.citationZiaziulia, P. Anisotropic Photoconductivity and Terahertz Emission from Semiconductors / P. Ziaziulia, V. Malevich // Advanced Laser Technologies (ALT’22) : book of abstracts of the 29th International Conference, Moscow, September 11-16. – Moscow, 2022. – С. 207.en_US
dc.identifier.urihttps://libeldoc.bsuir.by/handle/123456789/53661-
dc.description.abstractIn this report we consider the anisotropic photoconductivity in a semiconductor excited by two-frequency optical radiation, as well as its contribution to the photocurrent at the beat frequency corresponding to the THz region. The interband anisotropic photoconductivity arises due to the anisotropy of the momentum distribution of electrons excited by polarized light and the energy dependence of the momentum relaxation time and effective mass of the electrons. The response time of the anisotropic photoconductivity is very short, since it is determined by the electron momentum relaxation time, which for typical semiconductors is about 200 – 300 fs.en_US
dc.language.isoenen_US
dc.publisherООО "МЕСОЛ"en_US
dc.subjectпубликации ученыхen_US
dc.subjectphotoconductivityen_US
dc.subjectTHz radiationen_US
dc.subjectphotomixing effecten_US
dc.titleAnisotropic Photoconductivity and Terahertz Emission from Semiconductorsen_US
dc.typeArticleen_US
dc.identifier.DOIDOI: 10.24412/cl-35039-2022-22-207-207-
Appears in Collections:Публикации в зарубежных изданиях

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