| DC Field | Value | Language |
|---|
| dc.contributor.author | Shaposhnikov, V. L. | - |
| dc.contributor.author | Krivosheeva, A. V. | - |
| dc.contributor.author | Pushkarchuk, V. A. | - |
| dc.contributor.author | Pushkarchuk, A. L. | - |
| dc.contributor.author | Borisenko, V. E. | - |
| dc.coverage.spatial | Minsk | en_US |
| dc.date.accessioned | 2023-11-21T07:35:44Z | - |
| dc.date.available | 2023-11-21T07:35:44Z | - |
| dc.date.issued | 2023 | - |
| dc.identifier.citation | Structural and electronic properties of layered graphitic carbon nitride / V. L. Shaposhnikov [et al.] // Actual Problems of Solid State Physics : proceedings of the Х International Scientific Conference, Minsk, 22–26 May 2023 / The national academy of sciences of Belarus, Scientific and practical materials research centre of the national academy of sciences of Belarus (institute of solid state and semiconductor physics) ; ed. V. M. Fedosyuk [et al.]. – Minsk, 2023. – P. 582–585. | en_US |
| dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/53695 | - |
| dc.description.abstract | Atomic structures and electronic properties of layered graphitic carbon nitride are studied by
means of ab initio computer simulation. All the structures investigated were found to be
semiconductors with the band gaps lying in the range of 0.5-1.0 eV. The impact of number of layers
and their interaction on the band gap are analyzed. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | А. Н. Вараксин | en_US |
| dc.subject | публикации ученых | en_US |
| dc.subject | carbon nitride | en_US |
| dc.subject | band gap | en_US |
| dc.subject | monolayer | en_US |
| dc.subject | density of states | en_US |
| dc.title | Structural and electronic properties of layered graphitic carbon nitride | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | Публикации в изданиях Республики Беларусь
|
