DC Field | Value | Language |
dc.contributor.author | Grevtsov, N. | - |
dc.contributor.author | Chubenko, E. | - |
dc.contributor.author | Bondarenko, V. | - |
dc.contributor.author | Gavrilin, I. | - |
dc.contributor.author | Dronov, A. | - |
dc.contributor.author | Gavrilov, S. | - |
dc.contributor.author | Goroshko, D. | - |
dc.contributor.author | Goroshko, O. | - |
dc.contributor.author | Rymski, G. | - |
dc.contributor.author | Yanushkevich, K. | - |
dc.coverage.spatial | Нидерланды | en_US |
dc.date.accessioned | 2025-01-15T09:50:23Z | - |
dc.date.available | 2025-01-15T09:50:23Z | - |
dc.date.issued | 2025 | - |
dc.identifier.citation | Thermoelectric materials based on cobalt-containing sintered silicon-germanium alloys / N. Grevtsov, E. Chubenko, V. Bondarenko [et al.] // Materials Research Bulletin. – 2025. – Vol. 184. – P. 113258. | en_US |
dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/58755 | - |
dc.description.abstract | Thermoelectric materials based on cobalt-containing SiGe alloy films were fabricated using monocrystalline
silicon wafers with thin porous silicon layers electrochemically decorated with cobalt nanoparticles, filled
germanium and subsequently subjected to rapid thermal processing. SEM, XRD, Raman spectroscopy and
measurements of electrical conductivity and thermoelectric parameters revealed that an intermediate silicidization
step involving thermal processing at 850 ◦C after cobalt deposition is crucial to maximize the resulting
alloy’s thermoelectric capabilities. The obtained silicidized SiGe:Co samples demonstrate a Seebeck coefficient of
-450 μV/K and an estimated figure-of-merit ZT value of up to 0.72 at 450 K due to the presence of crystalline
cobalt silicides in the film. These results enable a new approach to the fabrication of thin film thermoelectric
materials based on SiGe alloys. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Elsevier | en_US |
dc.subject | публикации ученых | en_US |
dc.subject | electrochemical deposition | en_US |
dc.subject | semiconductors | en_US |
dc.subject | silicon-germanium | en_US |
dc.subject | cobalt | en_US |
dc.subject | cobalt silicides | en_US |
dc.subject | thermoelectric materials | en_US |
dc.title | Thermoelectric materials based on cobalt-containing sintered silicon-germanium alloys | en_US |
dc.type | Article | en_US |
dc.identifier.DOI | https://doi.org/10.1016/j.materresbull.2024.113258 | - |
Appears in Collections: | Публикации в зарубежных изданиях
|