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dc.contributor.authorGrevtsov, N.-
dc.contributor.authorChubenko, E.-
dc.contributor.authorGavrilin, I.-
dc.contributor.authorGoroshko, D.-
dc.contributor.authorGoroshko, O.-
dc.contributor.authorTsiniaikin, I.-
dc.contributor.authorBondarenko, V.-
dc.contributor.authorMurtazin, M.-
dc.contributor.authorDronov, A.-
dc.contributor.authorGavrilov, S.-
dc.coverage.spatialNetherlandsen_US
dc.date.accessioned2025-01-15T11:19:04Z-
dc.date.available2025-01-15T11:19:04Z-
dc.date.issued2025-
dc.identifier.citationImpact of porous silicon thickness on thermoelectric properties of silicon-germanium alloy films produced by electrochemical deposition of germanium into porous silicon matrices followed by rapid thermal annealing / N. Grevtsov, E. Chubenko, I. Gavrilin [et al.] // Materials Science in Semiconductor Processing. – 2025. – Vol. 187. – P. 109148.en_US
dc.identifier.urihttps://libeldoc.bsuir.by/handle/123456789/58756-
dc.description.abstractSilicon-germanium alloy films were formed by electrochemical deposition of germanium into porous silicon matrices with thicknesses varying from 1.5 to 10 μm followed by subsequent rapid thermal processing at 950 ◦C in an inert atmosphere. Study of the fabricated structures using SEM and Raman spectroscopy, as well as measurements of their electrical conductivity and thermoelectric properties revealed that the highest Seebeck coefficient (􀀀 505 μV/K at 450 K) and Power Factor (1950 μW/(m⋅K2) at 400 K) values were obtained when a 5 μm-thick porous silicon was used as a structural matrix. Under such conditions, an optimal balance between electrical conductivity, structural disorder and electrical insulation from the substrate is achieved due to the presence of a residual porous underlayer, making it possible to maximize the film’s thermoelectric performance. The obtained silicon-germanium alloy films are deemed suitable for the fabrication of both discrete and integrated thermoelectric devices based on monocrystalline silicon substrates.en_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.subjectпубликации ученыхen_US
dc.subjectporous siliconen_US
dc.subjectelectrochemical depositionen_US
dc.subjectsilicon-germaniumen_US
dc.subjectthermoelectric materialsen_US
dc.subjectthin filmsen_US
dc.titleImpact of porous silicon thickness on thermoelectric properties of silicon-germanium alloy films produced by electrochemical deposition of germanium into porous silicon matrices followed by rapid thermal annealingen_US
dc.typeArticleen_US
dc.identifier.DOIhttps://doi.org/10.1016/j.mssp.2024.109148-
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