DC Field | Value | Language |
dc.contributor.author | Grevtsov, N. | - |
dc.contributor.author | Chubenko, E. | - |
dc.contributor.author | Gavrilin, I. | - |
dc.contributor.author | Goroshko, D. | - |
dc.contributor.author | Goroshko, O. | - |
dc.contributor.author | Tsiniaikin, I. | - |
dc.contributor.author | Bondarenko, V. | - |
dc.contributor.author | Murtazin, M. | - |
dc.contributor.author | Dronov, A. | - |
dc.contributor.author | Gavrilov, S. | - |
dc.coverage.spatial | Netherlands | en_US |
dc.date.accessioned | 2025-01-15T11:19:04Z | - |
dc.date.available | 2025-01-15T11:19:04Z | - |
dc.date.issued | 2025 | - |
dc.identifier.citation | Impact of porous silicon thickness on thermoelectric properties of silicon-germanium alloy films produced by electrochemical deposition of germanium into porous silicon matrices followed by rapid thermal annealing / N. Grevtsov, E. Chubenko, I. Gavrilin [et al.] // Materials Science in Semiconductor Processing. – 2025. – Vol. 187. – P. 109148. | en_US |
dc.identifier.uri | https://libeldoc.bsuir.by/handle/123456789/58756 | - |
dc.description.abstract | Silicon-germanium alloy films were formed by electrochemical deposition of germanium into porous silicon
matrices with thicknesses varying from 1.5 to 10 μm followed by subsequent rapid thermal processing at 950 ◦C
in an inert atmosphere. Study of the fabricated structures using SEM and Raman spectroscopy, as well as
measurements of their electrical conductivity and thermoelectric properties revealed that the highest Seebeck
coefficient ( 505 μV/K at 450 K) and Power Factor (1950 μW/(m⋅K2) at 400 K) values were obtained when a 5
μm-thick porous silicon was used as a structural matrix. Under such conditions, an optimal balance between
electrical conductivity, structural disorder and electrical insulation from the substrate is achieved due to the
presence of a residual porous underlayer, making it possible to maximize the film’s thermoelectric performance.
The obtained silicon-germanium alloy films are deemed suitable for the fabrication of both discrete and integrated
thermoelectric devices based on monocrystalline silicon substrates. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Elsevier | en_US |
dc.subject | публикации ученых | en_US |
dc.subject | porous silicon | en_US |
dc.subject | electrochemical deposition | en_US |
dc.subject | silicon-germanium | en_US |
dc.subject | thermoelectric materials | en_US |
dc.subject | thin films | en_US |
dc.title | Impact of porous silicon thickness on thermoelectric properties of silicon-germanium alloy films produced by electrochemical deposition of germanium into porous silicon matrices followed by rapid thermal annealing | en_US |
dc.type | Article | en_US |
dc.identifier.DOI | https://doi.org/10.1016/j.mssp.2024.109148 | - |
Appears in Collections: | Публикации в зарубежных изданиях
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