Models of nanoelectronic devices based on graphene and other 2D-materials of system NANODEV

Abstract

Graphene and 2D-materials have some unique properties, therefore development of different devices based on these materials are attract the attention of researchers. In the paper models of different nanoelectronic devices, namely: quantum drift-diffusion model of field-effect transistor based on bilayer graphene, model of resonant tunneling structures based on 2D-materials with the vertical transport, and model of resonant tunneling diodes (RTDs) based on GaN/AlGaN with vertical transport are considered. The models are needed in order to develop new devices. With the using of the models the IV- characteristics are calculated.