Ultra-thin and thin CrSi films on Si(111): II. Transport and magnetic properties

Abstract

This section presents the results on the transport, magnetotransport, and magnetic properties of ultrathin CrSi films and thin CrSi films. In ultrathin CrSi films (3.19 nm with a predominant contribution from the m-CrSi phase), quantum magnetoresistance with an extremely low magnetoresistance effect (0.025–0.10%) is observed at 2–30 K; however, in the temperature range of 40–100 K, the ordinary and anomalous Hall effects for holes coexist. The majority of charge carriers in thin (approximately 31–47.7 nm) CrSi films consisting of the m-CrSi and c-CrSi phases are holes with a concentration of 2.6 × 10²² cm⁻³ and a mobility of 4.78–4.95 cm² V⁻¹ s⁻¹.