https://libeldoc.bsuir.by/handle/123456789/6358
Название: | Theoretical study of defect impact on two-dimensional MoS2 |
Авторы: | Borisenko, V. E. Krivosheeva, A. V. Shaposhnikov, V. L. Lazzari, J. L. Waileong, C. Gusakova, J. Tay, B. K. |
Ключевые слова: | публикации ученых;two-dimensional crystal;molybdenum disulfide;band gap;vacancy;oxygen |
Дата публикации: | 2015 |
Издательство: | Institute of Physics |
Описание: | Theoretical study of defect impact on two-dimensional MoS2 / A V.Krivosheeva [ and others] // Journal of Semiconductors . - 2015 . - № 36 (12). - 6 p. |
Аннотация: | Our theoretical findings demonstrate for the first time a possibility of band-gap engineering of monolayer MoS2 crystals by oxygen and the presence of vacancies. Oxygen atoms are revealed to substitute sulfur ones, forming stable MoS2-xOx ternary compounds, or adsorb on top of the sulfur atoms. The substituting oxygen provides a decrease of the band gap from 1.86 to 1.64 eV and transforms the material from a direct-gap to an indirect-gap semiconductor. The surface adsorbed oxygen atoms decrease the band gap up to 0.98 eV depending on their location tending to the metallic character of the electron energy bands at a high concentration of the adsorbed atoms. Oxygen plasma processing is proposed as an effective technology for such band-gap modifications. |
URI: | https://libeldoc.bsuir.by/handle/123456789/6358 |
Располагается в коллекциях: | Публикации в зарубежных изданиях |
Файл | Описание | Размер | Формат | |
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theoretical study of defect.pdf | 3.5 MB | Adobe PDF | Открыть |
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