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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/6759
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dc.contributor.authorSohrabi Anaraki, H.-
dc.contributor.authorGaponenko, N. V.-
dc.contributor.authorIvanov, V. A.-
dc.date.accessioned2016-05-13T08:30:12Z-
dc.date.accessioned2017-07-27T12:27:03Z-
dc.date.available2016-05-13T08:30:12Z-
dc.date.available2017-07-27T12:27:03Z-
dc.date.issued2015-
dc.identifier.citationSohrabi Anaraki, H. Photocurrent in strontium titanate films on silicon substrates / H. Sohrabi Anaraki, N. V. Gaponenko, V. A. Ivanov // Journal of Applied Spectroscopy. – 2015. – Volume 82. – Issue 5. – Pp. 857 - 860.ru_RU
dc.identifier.urihttps://libeldoc.bsuir.by/handle/123456789/6759-
dc.description.abstractUsing the sol-gel method, strontium titanate films were prepared (strontium titanate xerogels) on monocrystalline silicon substrates at 750°C annealing temperature. Nickel upper electrodes were deposited by magnetron sputtering, and the current–voltage characteristics were measured for the prepared structures with two upper electrodes and a Schottky barrier. Significant changes in the current–voltage characteristics were observed after illuminating the diode structure with a halogen lamp characterized by 57 mW/cm2 intensity and 3123°C color temperature of the tungsten filament. For a 65-nm thick strontium titanate film under reverse bias voltage of –3 V the photocurrent is 80 μA, whereas without illumination the reverse current is close to zero. Under direct illumination and a voltage of 3 V the photocurrent is 190 μA, while without illumination the current does not exceed 22.5 μA.ru_RU
dc.language.isoenru_RU
dc.publisherJournal of Applied Spectroscopyru_RU
dc.subjectпубликации ученыхru_RU
dc.subjectsol-gel methodru_RU
dc.subjectstrontium titanateru_RU
dc.subjectphotocurrentru_RU
dc.titlePhotocurrent in strontium titanate films on silicon substratesru_RU
dc.typeArticleru_RU
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