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Please use this identifier to cite or link to this item: https://libeldoc.bsuir.by/handle/123456789/33072
Title: Device and technology simulation of IGBT on SOI structure
Authors: Lovshenko, I.
Nelayev, V.
Belous, A.
Turtsevich, A.
Keywords: материалы конференций
technology «Silicon–On-Insulator»
field transistors
Issue Date: 2013
Publisher: БГУИР
Citation: Device and technology simulation of IGBT on SOI structure / I. Lovshenko and other // Nano-Design, Technology, Computer Simulation — NDTCS ’ 2013: proceedings of the 15th International Workshop on New Approaches to High-Tech, Minsk, June 11–15, 2013 / BSUIR. - Minsk, 2013. - P. 79 – 81.
Abstract: Static and dynamics characteristics of the power IGBT device at “Silicon-On-Insulate” structure were simulated. Analysis of the characteristics of such structure in comparison with the IGBT at the bulk silicon are presented. Advantages of IGBT device at SOI are revealed.
URI: https://libeldoc.bsuir.by/handle/123456789/33072
Appears in Collections:NDTCS 2013

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