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Title: Device and technology simulation of IGBT on SOI structure
Authors: Lovshenko, I. Yu.
Nelayev, V. V.
Belous, A. I.
Turtsevich, A.
Keywords: материалы конференций;technology «Silicon–On-Insulator»;field transistors
Issue Date: 2013
Publisher: БГУИР
Citation: Device and technology simulation of IGBT on SOI structure / I. Lovshenko and other // Nano-Design, Technology, Computer Simulation — NDTCS ’ 2013: proceedings of the 15th International Workshop on New Approaches to High-Tech, Minsk, June 11–15, 2013 / BSUIR. - Minsk, 2013. - P. 79 – 81.
Abstract: Static and dynamics characteristics of the power IGBT device at “Silicon-On-Insulate” structure were simulated. Analysis of the characteristics of such structure in comparison with the IGBT at the bulk silicon are presented. Advantages of IGBT device at SOI are revealed.
Appears in Collections:NDTCS 2013

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