|Title:||Device and technology simulation of IGBT on SOI structure|
|Authors:||Lovshenko, I. Yu.|
Nelayev, V. V.
Belous, A. I.
|Keywords:||материалы конференций;technology «Silicon–On-Insulator»;field transistors|
|Citation:||Device and technology simulation of IGBT on SOI structure / I. Lovshenko and other // Nano-Design, Technology, Computer Simulation — NDTCS ’ 2013: proceedings of the 15th International Workshop on New Approaches to High-Tech, Minsk, June 11–15, 2013 / BSUIR. - Minsk, 2013. - P. 79 – 81.|
|Abstract:||Static and dynamics characteristics of the power IGBT device at “Silicon-On-Insulate” structure were simulated. Analysis of the characteristics of such structure in comparison with the IGBT at the bulk silicon are presented. Advantages of IGBT device at SOI are revealed.|
|Appears in Collections:||NDTCS 2013|
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